Photodiode, APD, 2.5 Gb/s, Front-illuminated, Chip Datasheet (PDF, 0.14 MB)
The JDSU 2.5 Gbps front-illuminated avalanche photodiode (FI-APD) is designed for gigabit passive optical networks (GPON) that enable data transmissions for fiber-to-the-home (FTTH) offerings. As a result of their internal gain, APDs can significantly enhance receiver sensitivity relative to a standard PI photodiode.
This FI-APD uses JDSU proprietary APD designs known for their superior reliability. The dark current at 95 percent of breakdown voltage is typically in the sub-nano-amp range. It has an optical window of 53 µm, and a remote metal bond pad of 60 µm. The FI-APD has an operating temperature range from -40°C to 85°C, and the sensitivity with a low noise TIA can reach -33 dBm.
All APD chips come from JDSU-qualified wafers. Qualification includes burn-in and functional testing of a sample quantity of chips from each wafer. Each die shipped is tested at 25°C.
Key Features
- Front-illuminated device for ease of assembly, with 53 micron diameter active region
- -40 to 85°C operating temperature range
- -33 dBm typical sensitivity (TIA dependent)
- Better than -6 dBm overload performance (TIA dependent)
- Uses proven, highly reliable JDSU APD designs
Applications
- GPON
- SONET OC-48
- Ethernet
Compliance
- Fully qualified for Telcordia GR-468-CORE
- RoHS compliant
